PSMN5R0-100ES

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 26 September 2011

3 of 15

NXP Semiconductors

PSMN5R0-100ES

N-channel 100 V 5 m

Ω standard level MOSFET in I2PAK

4.

Limiting values

[1]

Continuous current limited by package

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

100

V

drain-gate voltage

-

100

V

gate-source voltage

-20

20

V

drain current

-110

A

[1]

-

120

A

peak drain current

-

622

A

total power dissipation

-

338

W

storage temperature

-55

175

°C

junction temperature

-55

175

°C

peak soldering temperature

-

260

°C

Source-drain diode

source current

[1]

-

120

A

peak source current

-

622

A

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

-

537

mJ

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

003aaf735

0

40

80

120

160

200

0

50

100

150

200

T

I

D

(A)

(1)

0

200

150

50

100

03aa16

40

80

120

(%)

0