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SQM60N06 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SQM60N06 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page SQM60N06-15 www.vishay.com Vishay Siliconix S11-2035-Rev. C, 17-Oct-11 4 Document Number: 64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 ID =30A VGS =10V T J - Junction Temperature (°C) 0 0.02 0.04 0.06 0.08 0.10 0 2 468 10 TJ = 25 °C TJ = 150 °C V GS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C - 1.7 - 1.2 - 0.7 - 0.2 0.3 0.8 - 50 - 25 0 25 50 75 100 125 150 175 ID =5mA ID = 250 μA T J - Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) ID =10mA 60 64 68 72 76 80 |
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