9012G-X-T92-B datasheet(2/3 Pages) UTC

Part #	9012G-X-T92-B

Description	1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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9012

PNP SILICON EPITAXIAL TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-029.B



ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-base voltage

VCBO

-40

V

Collector-emitter voltage

VCEO

-20

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-500

mA

Collector dissipation

PC

625

mW

Junction Temperature

TJ

150

C

Storage Temperature

TSTG

-55 ~ +150

C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-base breakdown voltage

BVCBO

IC=-100μA,IE=0

-40

V

Collector-emitter breakdown voltage

BVCEO

IC=-1mA, IB=0

-20

V

Emitter-base breakdown voltage

BVEBO

IE=-100μA, IC=0

-5

V

Collector cutoff current

ICBO

VCB=-25V, IE=0

-100

nA

Emitter cutoff current

IEBO

VEB=-3V, IC=0

-100

nA

DC current gain

hFE1

VCE=-1V, IC=-50mA

64

120

300

hFE2

VCE=-1V, IC=-500mA

40

90

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.18

-0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-500mA, IB=-50mA

-0.95

-1.2

V

Base-emitter on voltage

VBE(on)

VCE=-1V, IC=-10mA

-0.6 -0.67

-0.7

V



CLASSIFICATION OF hFE1

RANK

D

E

F

G

H

I

RANGE

64-91

78-112

96-135

112-166

144-202

190-300

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