8050SG-X-T92-B datasheet(2/4 Pages) UTC

Part #	8050SG-X-T92-B

Description	LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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8050S

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-001.I



ABSOLUTE MAXIMUM RATING ( TA=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

700

mA

SOT-23

350

mW

Collector Dissipation(TA=25°C)

TO-92

PC

1

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = 100μA, IE = 0

30

V

Collector-Emitter Breakdown Voltage

BVCEO

IC = 1mA, IB = 0

20

V

Emitter-Base Breakdown Voltage

BVEBO

IE = 100μA, IC =0

5

V

Collector Cut-Off Current

ICBO

VCB = 30V,IE = 0

1

uA

Emitter Cut-Off Current

IEBO

VEB = 5V, IC = 0

100

nA

hFE1

VCE = 1V, IC = 1mA

100

hFE2

VCE = 1V, IC = 150 mA

120

400

DC Current Gain (note)

hFE3

VCE = 1V, IC = 500mA

40

Collector-Emitter Saturation Voltage

VCE(SAT) IC = 500mA, IB = 50mA

0.5

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC = 500mA, IB = 50mA

1.2

V

Base-Emitter Saturation Voltage

VBE(SAT)

VCE = 1V, IC = 10mA

1.0

V

Current Gain Bandwidth Product

fT

VCE = 10V, IC = 50mA

100

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

9.0

pF



CLASSIFICATION OF hFE2

RANK

C

D

E

RANGE

120-200

160-300

280-400

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