IPC80N04S4-03 datasheet(3/9 Pages) INFINEON

Part #	IPC80N04S4-03

Description	N-channel - Enhancement mode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPC80N04S4-03

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

4400

5720

pF

Output capacitance

C oss

-

1020

1330

Reverse transfer capacitance

Crss

-33

77

Turn-on delay time

t d(on)

-14

-

ns

Rise time

t r

-7

-

Turn-off delay time

t d(off)

-15

-

Fall time

t f

-13

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-24

32

nC

Gate to drain charge

Q gd

-8

18

Gate charge total

Q g

-55

71

Gate plateau voltage

V plateau

-5.6

-

V

Reverse Diode

Diode continous forward current

2)

I S

--

80

A

Diode pulse current

2)

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=40 A,

T j=25 °C

-0.9

1.3

V

Reverse recovery time

2)

t rr

-45

-

ns

Reverse recovery charge

2)

Q rr

-45

-

nC

2) Defined by design. Not subject to production test.

3) T

J > 150°C is limited to 200h operation time over life time of the device

1) Current is limited by package; with an R

thJC = 1.5 K/W the chip is able to carry 134A at 25°C.

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=20 V, V GS=10 V,

I D=80 A, R G=3.5 

V DD=32 V, I D=80 A,

V GS=0 to 10 V

V R=20 V, I F=50A,

di F/dt =100 A/µs

T C=25 °C

Rev. 1.0

page 3

2015-05-22

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