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MX29F040PI-70G Datasheet(PDF) 1 Page - Macronix International

Part # MX29F040PI-70G
Description  4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
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Manufacturer  MCNIX [Macronix International]
Direct Link  http://www.macronix.com
Logo MCNIX - Macronix International

MX29F040PI-70G Datasheet(HTML) 1 Page - Macronix International

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FEATURES
• 524,288 x 8 only
• Single power supply operation
- 5.0V only operation for read, erase and program op-
eration
• Fast access time: 55/70/90/120ns
• Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase
8 equal sectors of 64K-Byte each
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends an erase operation to read data from, or
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory
contents even after 100,000 erase and program
cycles. The MXIC cell is designed to optimize the
erase and program mechanisms. In addition, the
combination of advanced tunnel oxide processing
and low internal electric fields for erase and
programming operations produces reliable cycling.
The MX29F040 uses a 5.0V
±10% VCC supply to
perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
GENERAL DESCRIPTION
The MX29F040 is a 4-mega bit Flash memory organized
as 512K bytes of 8 bits. MXIC's Flash memories offer
the most cost-effective and reliable read/write non-vola-
tile random access memory. The MX29F040 is pack-
aged in 32-pin PLCC, TSOP, PDIP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
The standard MX29F040 offers access time as fast as
55ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29F040 has separate chip enable (CE) and output
enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F040 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
program data to, another sector that is not being
erased, then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program
and erase cycle completion.
• Sector protect/unprotect for 5V only system or 5V/
12V system.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 32-pin PLCC, TSOP or PDIP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
• 20 years data retention
1
P/N:PM0538
REV. 2.3, DEC. 10, 2004
MX29F040
4M-BIT[512KX8]CMOSEQUALSECTORFLASHMEMORY


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