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NX3008PBKS Datasheet(PDF) 10 Page - NXP Semiconductors |
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NX3008PBKS Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 17 page NX3008PBKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 1 August 2011 10 of 17 NXP Semiconductors NX3008PBKS 30 V, 200 mA dual P-channel Trench MOSFET ID = -200 mA; VDS = -15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16. Source current as a function of source-drain voltage; typical values 001aao264 -2 -3 -1 -4 -5 VGS (V) 0 QG (nC) 0.0 0.2 0.4 0.6 0.7 0.5 0.3 0.1 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 001aao265 VSD (V) 0.0 -1.2 -0.8 -0.4 -0.10 -0.15 -0.05 -0.20 -0.25 IS (A) 0.00 (1) (2) |
Similar Part No. - NX3008PBKS_15 |
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Similar Description - NX3008PBKS_15 |
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