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NX1029X Datasheet(PDF) 8 Page - NXP Semiconductors |
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NX1029X Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 20 page NX1029X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 12 August 2011 8 of 20 NXP Semiconductors NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID =-10 µA; VGS =0V; Tj = 25 °C -50 --V VGSth gate-source threshold voltage ID =-250µA; VDS =VGS; Tj = 25 °C -1.1 -1.6 -2.1 V IDSS drain leakage current VDS =-50 V; VGS =0V; Tj = 25 °C ---1 µA VDS =-50 V; VGS =0V; Tj = 150 °C ---2 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C - - -10 µA VGS =-20 V; VDS =0V; Tj = 25 °C - - -10 µA RDSon drain-source on-state resistance VGS =-10 V; ID = -100 mA; Tj =25°C - 4.5 7.5 Ω VGS =-10 V; ID = -100 mA; Tj = 150 °C - 8 13.5 Ω VGS =-5 V; ID = -100 mA; Tj =25°C - 5.1 8.5 Ω gfs transfer conductance VDS =-10 V; ID = -100 mA; Tj = 25 °C - 150 - mS TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID =10µA; VGS =0V; Tj = 25 °C 60 --V VGSth gate-source threshold voltage ID =250 µA; VDS =VGS; Tj = 25 °C 1.1 1.6 2.1 V IDSS drain leakage current VDS =60V; VGS =0V; Tj = 25 °C --1 µA VDS =60V; VGS =0V; Tj = 150 °C --10 µA IGSS gate leakage current VGS =20V; VDS =0V; Tj = 25 °C --10 µA VGS =-20 V; VDS =0V; Tj = 25 °C --10 µA RDSon drain-source on-state resistance VGS =10V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ≤ 0.01 ; Tj =25°C -1 1.6 Ω VGS =10V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ≤ 0.01 ; Tj = 150 °C - 2.25 3.6 Ω VGS =5V; ID = 50 mA; pulsed; tp ≤ 300 µs; δ≤ 0.01 ; Tj =25°C -1.3 2 Ω gfs transfer conductance VDS =10V; ID = 100 mA; Tj = 25 °C - 550 - mS TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge VDS =-25 V; ID = -180 mA; VGS =-5V; Tj =25°C - 0.26 0.35 nC QGS gate-source charge - 0.12 - nC QGD gate-drain charge - 0.09 - nC Ciss input capacitance VDS = -25 V; f = 1 MHz; VGS =0V; Tj =25°C - 2436pF Coss output capacitance - 4.5 - pF Crss reverse transfer capacitance -1.3 -pF td(on) turn-on delay time VDS =-30 V; RL = 250 Ω; VGS =-10 V; RG(ext) =6 Ω; Tj =25 °C - 1326ns tr rise time - 11 - ns td(off) turn-off delay time - 48 96 ns tf fall time - 25 - ns |
Similar Part No. - NX1029X_15 |
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Similar Description - NX1029X_15 |
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