NX1029X

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Product data sheet

Rev. 1 — 12 August 2011

8 of 20

NXP Semiconductors

NX1029X

60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET

7.

Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TR2 (P-channel), Static characteristics

drain-source

breakdown voltage

-50

--V

gate-source threshold

voltage

-1.1

-1.6

-2.1

V

drain leakage current

---1

µA

---2

µA

gate leakage current

-

-

-10

µA

-

-

-10

µA

drain-source on-state

resistance

-

4.5

7.5

Ω

-

8

13.5

Ω

-

5.1

8.5

Ω

transfer conductance

-

150

-

mS

TR1 (N-channel), Static characteristics

drain-source

breakdown voltage

60

--V

gate-source threshold

voltage

1.1

1.6

2.1

V

drain leakage current

--1

µA

--10

µA

gate leakage current

--10

µA

--10

µA

drain-source on-state

resistance

-1

1.6

Ω

-

2.25

3.6

Ω

-1.3

2

Ω

transfer conductance

-

550

-

mS

TR2 (P-channel), Dynamic characteristics

total gate charge

-

0.26

0.35

nC

gate-source charge

-

0.12

-

nC

gate-drain charge

-

0.09

-

nC

input capacitance

-

2436pF

output capacitance

-

4.5

-

pF

reverse transfer

capacitance

-1.3

-pF

turn-on delay time

-

1326ns

rise time

-

11

-

ns

turn-off delay time

-

48

96

ns

fall time

-

25

-

ns