SQJ942EP

www.vishay.com

Vishay Siliconix

S13-0708-Rev. B, 01-Apr-13

1

Document Number: 62669

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs

FEATURES

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

N-CHANNEL 1 N-CHANNEL 2

40

40

0.022

0.011

0.026

0.013

15

45

Configuration

Dual N

Bottom View

1

2

3

4

6.15mm

5.13mm

N-Channel 1 MOSFET

N-Channel 2 MOSFET

ORDERING INFORMATION

Package

PowerPAK SO-8L Dual Asymmetric

Lead (Pb)-free and Halogen-free

SQJ942EP-T1-GE3

PARAMETER

SYMBOL

N-CHANNEL 1

N-CHANNEL 2

UNIT

Drain-Source Voltage

40

40

V

Gate-Source Voltage

± 20

15

45

A

15

32

15

44

60

180

Single Pulse Avalanche Current

L = 0.1 mH

19

27

Single Pulse Avalanche Energy

18.5

36.5

mJ

17

48

W

6

16

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

N-CHANNEL 1

N-CHANNEL 2

UNIT

Junction-to-Ambient

75

70

°C/W

Junction-to-Case (Drain)

93.1