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IGW75N65H5 Datasheet(PDF) 9 Page - Infineon Technologies AG |
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IGW75N65H5 Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 14 page 9 IGW75N65H5 Highspeedseriesfifthgeneration Rev.2.1,2015-05-20 Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=75A,dynamictestcircuitin Figure E) RG,GATERESISTANCE[ Ω] 5 15 25 35 45 55 65 75 85 10 100 1000 td(off) tf td(on) tr Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=75A,RG(on)=8 Ω,RG(off)=8Ω,dynamictest circuit in Figure E) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 175 1 10 100 1000 td(off) tf td(on) tr Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.75mA) Tvj,JUNCTIONTEMPERATURE[°C] 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 typ. min. max. Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8 Ω,RG(off)=8Ω,dynamic test circuit in Figure E) IC,COLLECTORCURRENT[A] 0 25 50 75 100 125 150 175 200 225 0 2 4 6 8 10 12 14 16 18 20 Eoff Eon Ets |
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