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NX3L1G66 Datasheet(PDF) 3 Page - NXP Semiconductors |
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NX3L1G66 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 19 page NX3L1G66 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 8 — 9 November 2011 3 of 19 NXP Semiconductors NX3L1G66 Low-ohmic single-pole single-throw analog switch 7.2 Pin description 8. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 9. Limiting values [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For TSSOP5 package: above 87.5 C the value of P tot derates linearly with 4.0 mW/K. For XSON6 package: above 118 C the value of P tot derates linearly with 7.8 mW/K. Table 3. Pin description Symbol Pin Description SOT353-1 SOT886 Y 1 1 independent input or output Z 2 2 independent output or input GND 3 3 ground (0 V) E 4 4 enable input (active HIGH) n.c. - 5 not connected VCC 5 6 supply voltage Table 4. Function table[1] Input E Switch LOFF-state H ON-state Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +4.6 V VI input voltage enable input E [1] 0.5 +4.6 V VSW switch voltage [2] 0.5 VCC + 0.5 V IIK input clamping current VI < 0.5 V 50 - mA ISK switch clamping current VI < 0.5 V or VI >VCC + 0.5 V - 50 mA ISW switch current VSW > 0.5 V or VSW < VCC + 0.5 V; source or sink current - 350 mA VSW > 0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current - 500 mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 Cto +125 C [3] -250 mW |
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