SQJ403EEP_15 datasheet(1/11 Pages) VISHAY

Part #	SQJ403EEP

Description	Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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SQJ403EEP

www.vishay.com

Vishay Siliconix

S13-0024-Rev. B, 14-Jan-13

1

Document Number: 67076

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive P-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

•TrenchFET® Power MOSFET

• ESD Protection: 3000 V

• AEC-Q101 Qualifiedd

•100 % Rg and UIS Tested

• Material categorization:



For definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width

 300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a

result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to

ensure adequate bottom side solder interconnection.

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

VDS (V)

- 30

RDS(on) () at VGS = - 10 V

0.0085

RDS(on) () at VGS = - 4.5 V

0.0200

ID (A)

- 30a

Configuration

Single

4

6.15

mm

PowerPAK® SO-8L Single

5.13

mm

3

2

1

G

S

D

P-Channel

5400

Ω

D

S

G

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SQJ403EEP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Currenta

TC = 25 °C

ID

- 30

A

TC = 125 °C

- 30

Continuous Source Current (Diode Conduction)a

IS

- 30

Pulsed Drain Currentb

IDM

- 84

Single Pulse Avalanche Current

L = 0.1 mH

IAS

- 50

Single Pulse Avalanche Energy

EAS

125

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

68

W

TC = 125 °C

22

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)e, f

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

LIMIT

UNIT

Junction-to-Ambient

PCB Mountc

RthJA

68

°C/W

Junction-to-Case (Drain)

RthJC

2.2

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