MX29LV800TMC-70 datasheet(10/60 Pages) MCNIX

Part #	MX29LV800TMC-70

Description	8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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Manufacturer	MCNIX [Macronix International]

Direct Link	http://www.macronix.com

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10 / 60 page

10

P/N:PM0709

MX29LV800T/B

REV. 1.3, JAN. 24, 2002

REQUIREMENTS FOR READING ARRAY

DATA

To read array data from the outputs, the system must

drive the CE and OE pins to VIL. CE is the power control

and selects the device. OE is the output control and gates

array data to the output pins. WE should remain at VIH.

The internal state machine is set for reading array data

upon device power-up, or after a hardware reset. This

ensures that no spurious alteration of the memory contect

occurs during the power transition. No command is

necessary in this mode to obtain array data. Standard

microprocessor read cycles that assert valid address on

the device address inputs produce valid data on the device

data outputs.The device remains enabled for read access

until the command register contents are altered.

WRITE COMMANDS/COMMAND

SEQUENCES

To program data to the device or erase sectors of memory

, the sysytem must drive WE and CE to VIL, and OE to

VIH.

The device features an Unlock Bypass mode to facilitate

faster programming. Once the device enters the Unlock

Bypass mode, only two write cycles are required to

program a byte, instead of four. The "byte Program

Command Sequence" section has details on

programming data to the device using both standard and

Unlock Bypass command sequences.

An erase operation can erase one sector, multiple sectors

, or the entire device. Table indicates the address space

that each sector occupies. A "sector address" consists

of the address bits required to uniquely select a sector.

The "Writing specific address and data commands or

sequences into the command register initiates device

operations. Table 1 defines the valid register command

sequences. Writing incorrect address and data values or

writing them in the improper sequence resets the device

to reading array data."section has details on erasing a

sector or the entire chip, or suspending/resuming the erase

operation.

After the system writes the autoselect command

sequence, the device enters the autoselect mode. The

system can then read autoselect codes from the internal

reqister (which is separate from the memory array) on

Q7-Q0. Standard read cycle timings apply in this mode.

Refer to the Autoselect Mode and Autoselect Command

Sequence section for more information.

ICC2 in the DC Characteristics table represents the

active current specification for the write mode. The "AC

Characteristics" section contains timing specification

table and timing diagrams for write operations.

STANDBY MODE

When using both pins of CE and RESET, the device

enter CMOS Standby with both pins held at Vcc ± 0.3V.

IF CE and RESET are held at VIH, but not within the

range of VCC ± 0.3V, the device will still be in the standby

mode, but the standby current will be larger. During Auto

Algorithm operation, Vcc active current (Icc2) is required

even CE = "H" until the operation is complated. The de-

vice can be read with standard access time (tCE) from

either of these standby modes, before it is ready to read

data.

OUTPUT DISABLE

With the OE input at a logic high level (VIH), output from

the devices are disabled. This will cause the output pins

to be in a high impedance state.

RESET OPERATION

The RESET pin provides a hardware method of resetting

the device to reading array data. When the RESET pin is

driven low for at least a period of tRP, the device

immediately terminates any operation in progress,

tristates all output pins, and ignores all read/write

commands for the duration of the RESET pluse. The

device also resets the internal state machine to reading

array data.The operation that was interrupted should be

reinitated once the device is ready to accept another

command sequence, to ensure data integrity

Current is reduced for the duration of the RESET pulse.

When RESET is held at VSS±0.3V, the device draws

CMOS standby current (ICC4). If RESET is held at VIL

but not within VSS±0.3V, the standby current will be

greater.

The RESET pin may be tied to system reset circuitry. A

system reset would that also reset the Flash memory,

enabling the system to read the boot-up firm-ware from

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MX29LV800TMC-70 Datasheet(PDF) 10 Page - Macronix International

MX29LV800TMC-70 Datasheet(HTML) 10 Page - Macronix International

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