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MX29LV004T Datasheet(PDF) 1 Page - Macronix International

Part No. MX29LV004T
Description  4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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Maker  MCNIX [Macronix International]
Homepage  http://www.macronix.com
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1
P/N:PM0732
REV. 1.1, SEP. 19, 2001
MX29LV004T/B
4M-BIT[512Kx8]CMOSSINGLEVOLTAGE
3VONLYFLASHMEMORY
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
• Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- 40-pin TSOP
- 32-pin PLCC
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 524,288 x 8
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 55R/70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte Programming (9us typical)
- Sector Erase (Sector structure 16K-Byte x 1,
8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
GENERAL DESCRIPTION
The MX29LV004T/B is a 4-mega bit Flash memory or-
ganized as 512K bytes of 8 bits. MXIC's Flash memo-
ries offer the most cost-effective and reliable read/write
non-volatile random access memory. The MX29LV004T/
B is packaged in 40-pin TSOP and 32-pin PLCC. It is
designed to be reprogrammed and erased in system or
in standard EPROM programmers.
The standard MX29LV004T/B offers access time as fast
as 55ns, allowing operation of high-speed microproces-
sors without wait states. To eliminate bus contention,
the MX29LV004T/B has separate chip enable (CE) and
output enable (OE) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV004T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV004T/B uses a 2.7V~3.6V VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
PRELIMINARY




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