PXAC203302FV_15 datasheet(2/8 Pages) INFINEON

Part #	PXAC203302FV

Description	Thermally-Enhanced High Power RF LDMOS FET

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 8 page

Data Sheet

2 of 8

Rev. 02, 2015-06-09

PXAC203302FV

DC Characteristics (each side)

Characteristic

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VGS = 0 V, IDS = 10 mA

V(BR)DSS

65

—

V

Drain Leakage Current

VDS = 28 V, VGS = 0 V

IDSS

—

1

µA

VDS = 63 V, VGS = 0 V

IDSS

—

10

µA

On-State Resistance (main)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.088

—

W

On-State Resistance (peak)

VGS = 10 V, VDS = 0.1 V

RDS(on)

—

0.088

—

W

Operating Gate Voltage (main)

VDS = 28 V, IDQ = 900 mA

VGS

2.5

2.7

2.8

V

(peak)

VDS = 28 V, IDQ = 0 A

VGS

0.6

1.1

1.4

V

Gate Leakage Current

VGS = 10 V, VDS = 0 V

IGSS

—

1

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

65

V

Gate-Source Voltage

VGS

–6 to +10

V

Operating Voltage

VDD

0 to +32

V

Junction Temperature

TJ

225

°C

Storage Temperature Range

TSTG

–65 to +150

°C

Thermal Resistance (main, TCASE = 70°C, 56.2 W CW)

RqJC

0.62

°C/W

(peak, TCASE = 70°C, 260 W CW)

RqJC

0.35

°C/W

Ordering Information

Type and Version

Order Code

Package Description

Shipping

PXAC203302FV V1 R250

PXAC203302FVV1R250XTMA1

H-37275-4, earless flange

Tape & Reel, 250 pcs

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PXAC203302FV Datasheet(PDF) 2 Page - Infineon Technologies AG

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