BUK625R2-30C

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 1 — 12 July 2011

3 of 14

NXP Semiconductors

BUK625R2-30C

N-channel TrenchMOS intermediate level FET

4.

Limiting values

[1]

Accumulated pulse duration not to exceed 5 mins.

[2]

-16V accumulated duration not to exceed 168 hrs

[3]

Continuous current is limited by package.

[4]

Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.

[5]

Repetitive avalanche rating limited by an average junction temperature of 170 °C.

[6]

Refer to application note AN10273 for further information.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

30

V

gate-source voltage

Pulsed

[1]

-20

20

V

DC

[2]

-16

16

V

drain current

[3]

-90

A

-81

A

peak drain current

see Figure 3

-

455

A

total power dissipation

-

128

W

storage temperature

-55

175

°C

junction temperature

-55

175

°C

Source-drain diode

source current

[3]

-90

A

peak source current

-

455

A

Avalanche ruggedness

non-repetitive drain-source

avalanche energy

-

153

mJ

repetitive drain-source

avalanche energy

[4][5][6]

--mJ