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BUK626R2-40C Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK626R2-40C Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK626R2-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 12 July 2011 8 of 14 NXP Semiconductors BUK626R2-40C N-channel TrenchMOS intermediate level FET Fig 9. Gate-source threshold voltage as a function of junction temperature Fig 10. Sub-threshold drain current as a function of gate-source voltage Fig 11. Drain-source on-state resistance as a function of drain current; typical values Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aad805 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aae725 0 5 10 15 20 0 50 100 150 ID(A) RDSon (m Ω) 8.0 6.0 4.5 3.8 VGS(V) = 10 5.0 4.0 003aad793 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) a |
Similar Part No. - BUK626R2-40C_15 |
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Similar Description - BUK626R2-40C_15 |
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