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BUK653R3-30C Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK653R3-30C Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page BUK653R3-30C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 13 July 2011 7 of 14 NXP Semiconductors BUK653R3-30C N-channel TrenchMOS intermediate level FET Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj =25°C; see Figure 16 -0.8 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =0V; VDS =25V -50 -ns Qr recovered charge - 73 - nC Table 6. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Tj = 25°C; VDS = 25 V Tj = 25°C and tp = 300 us Fig 5. Forward transconductance as a function of drain current; typical values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values VDS = 25 V Tj = 25°C; ID 25 A Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aae532 0 30 60 90 120 150 0 30 60 90 120 150 ID (A) gfs (S) 003aae533 0 50 100 150 200 0 0.5 1 1.5 2 VDS (V) ID (A) 3.8 4 4.5 5 6 3.2 VGS (V) = 10 3.4 3.6 003aae534 0 40 80 120 01 23 4 VGS (V) ID (A) Tj = 175 °C Tj = 25 °C 003aae535 0 3 6 9 12 0 5 10 15 20 VGS (V) RDSon (m Ω) |
Similar Part No. - BUK653R3-30C_15 |
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Similar Description - BUK653R3-30C_15 |
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