BUK9615-100A

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Product data sheet

Rev. 3 — 19 April 2011

6 of 13

NXP Semiconductors

BUK9615-100A

N-channel TrenchMOS logic level FET

Fig 7.

Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 8.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 9.

Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

100

150

50

200

250

(A)

0

010

8

46

2

003aaf368

4.0

3.8

3.6

3.2

3.0

2.8

2.6

2.4

3.4

5

11

17

15

13

19

(m

Ω)

0

100

80

20

40

60

003aaf369

3.2

3.4

3.6

4.0

5.0

10.5

13.5

12.5

11.5

14.5

(m

Ω)

311

9

57

003aaf370

40

60

20

80

(A)

0

04

3

12

003aaf371

100