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BUK9606-75B Datasheet(PDF) 2 Page - NXP Semiconductors |
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BUK9606-75B Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page BUK9606-75B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 20 July 2011 2 of 13 NXP Semiconductors BUK9606-75B N-channel TrenchMOS logic level FET [1] Continuous current is limited by package. 2. Pinning information [1] It is not possible to make a connection to pin 2. 3. Ordering information Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 75 V; RGS =50 Ω; VGS =5V; Tj(init) = 25 °C; unclamped -- 852 mJ Dynamic characteristics QGD gate-drain charge VGS =5V; ID =25A; VDS =60 V; Tj =25°C; see Figure 13 -37 -nC Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate SOT404 (D2PAK) 2 D drain[1] 3S source mb D mounting base; connected to drain mb 13 2 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK9606-75B D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 |
Similar Part No. - BUK9606-75B_15 |
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Similar Description - BUK9606-75B_15 |
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