1.

Product profile

1.1 General description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)

in a plastic package using advanced TrenchMOS technology. This product has been

designed and qualified to the appropriate AEC Q101 standard for use in high performance

automotive applications.

1.2 Features and benefits

AEC Q101 compliant

Suitable for standard and logic level

gate drive sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V Automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

1.4 Quick reference data

BUK663R5-30C

N-channel TrenchMOS intermediate level FET

Rev. 02 — 16 November 2010

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

--30

V

drain current

see Figure 1

[1]

--100

A

total power

dissipation

--158

W

Static characteristics

drain-source on-state

resistance

-2.9

3.5

m

Ω