NXP Semiconductors

PMPB27EP

30 V, single P-channel Trench MOSFET

PMPB27EP

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Product data sheet

10 September 2012

3 / 14

Symbol

Parameter

Conditions

Min

Max

Unit

[1]

-

3.5

W

-

12.5

W

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

-1.9

A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature