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PMPB27EP Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMPB27EP Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page NXP Semiconductors PMPB27EP 30 V, single P-channel Trench MOSFET PMPB27EP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 10 September 2012 3 / 14 Symbol Parameter Conditions Min Max Unit Tamb = 25 °C; t ≤ 5 s [1] - 3.5 W Tsp = 25 °C - 12.5 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.9 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Tj (°C) - 75 175 125 25 75 - 25 017aaa123 40 80 120 Pder (%) 0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) - 75 175 125 25 75 - 25 017aaa124 40 80 120 Ider (%) 0 Fig. 2. Normalized continuous drain current as a function of junction temperature |
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