ISL9206ADHZ-T datasheet(2/17 Pages) INTERSIL

Part #	ISL9206ADHZ-T

Description	FlexiHash For Battery Authentication

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Manufacturer	INTERSIL [Intersil Corporation]

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2

FN6651.1

July 30, 2008

Absolute Maximum Ratings (Reference to GND)

Thermal Information

Supply Voltage (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V

All Other Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to VDD + 0.5V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3015.7) . . .4000V

Machine Model (Per EIAJ ED-4701 Method C-111) . . . . . . . .400V

Charged Device Model . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V

Recommended Operating Conditions

Ambient Temperature Range . . . . . . . . . . . . . . . . . . .-25°C to +85°C

Thermal Resistance (Typical)

θJA (°C/W) θJC (°C/W)

SOT-23 Package (Note 1) . . . . . . . . . .

200

N/A

2x3 TDFN Package (Notes 2, 3) . . . . .

70

10.5

Maximum Junction Temperature (Plastic Package) . . . . . . . +125°C

Maximum Storage Temperature Range . . . . . . . . . . -40°C to +125°C

Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTES:

1.

θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

2.

θ

JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See

Tech Brief TB379.

3. For

θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

Electrical Specifications

Unless otherwise noted, all parameters are established over the operational supply voltage and temperature

range of the device as follows: TA = -25°C to +85°C; VDD = 2.6V to 4.8V; Parameters with MIN and/or MAX

limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization

and are not production tested.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS

Supply Voltage

VDD

During normal operation

2.6

-

4.8

V

During OTP ROM programming

2.8

-

4.8

V

Run Mode Supply Current

(Exclude I/O Current)

IDD

VDD = 4.2V

-

38

55

µA

VDD = 4.8V

-

40

65

µA

VDD = 1.5V

5.0

8.0

µA

Sleep Mode Supply Current

IDDS

VDD = 4.2V, XSD pin floating

-

0.15

0.5

µA

OTP Programming Mode Supply Current

IDDP

For ~ 1.8ms duration per write operation

-

250

500

µA

Internal Regulated Supply Voltage

VRG

Observable only in test mode

2.3

2.5

2.7

V

Internal OTP ROM Programming Voltage

VPP

Observable only in test mode

11

12

13

V

POR Release Threshold

VPOR+

1.9

2.2

2.4

V

POR Assertion Threshold

VPOR-

1.5

1.8

2.1

V

XSD PIN CHARACTERISTICS

XSD Input Low Voltage

VIL

-0.4

-

0.5

V

XSD Input High Voltage

VIH

1.5

-

VDD + 0.4V

V

XSD Input Hysteresis

VHYS

-

400

-

mV

XSD Internal Pull-down Current

IPD

VDD = 2.6V

-

0.8

-

µA

VDD = 4.2V

-

1.2

2.0

µA

VDD = 4.8V

-

1.8

2.5

µA

XSD Output Low Voltage

VOL

IOL = 1mA

-

0.4

V

XSD Input Transition Time

tX

10% to 90% transition time

-

2

µs

XSD Output Fall Time

tF

90% to 10%, CLOAD = 12pF

-

50

ns

XSD Pin Capacitance

CPIN

-6

-

pF

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