IPP60R330P6_15 datasheet(4/19 Pages) INFINEON

Part #	IPP60R330P6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 19 page

4

600VCoolMOS™P6PowerTransistor

IPW60R330P6,IPB60R330P6,IPP60R330P6,

IPA60R330P6

Rev.2.2,2015-07-10

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

12.0

7.6

A

TC=25°C

TC=100°C

Pulsed drain current

2)

ID,pulse

-

33

A

TC=25°C

Avalanche energy, single pulse

EAS

-

247

mJ

ID=2.1A; VDD=50V; see table 12

Avalanche energy, repetitive

EAR

-

0.37

mJ

ID=2.1A; VDD=50V; see table 12

Avalanche current, repetitive

IAR

-

2.1

A

-

MOSFET dv/dt ruggedness

dv/dt

-

100

V/ns

VDS=0...400V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation (Non FullPAK)

TO-220, TO-263, TO-247

Ptot

-

93

W

TC=25°C

Power dissipation (FullPAK)

TO-220FP

Ptot

-

32

W

TC=25°C

Storage temperature

Tstg

-55

-

150

°C

-

Operating junction temperature

Tj

-55

-

150

°C

-

Mounting torque (Non FullPAK)

TO-220, TO-247

-

60

Ncm

M3 and M3.5 screws

Mounting torque (FullPAK)

TO-220FP

-

50

Ncm

M2.5 screws

Continuous diode forward current

IS

-

10.4

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

33

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

-

15

V/ns

VDS=0...400V,ISD<=IS,Tj=25°C

see table 10

Maximum diode commutation speed

dif/dt

-

500

A/

µs VDS=0...400V,ISD<=IS,Tj=25°C

see table 10

Insulation withstand voltage for

TO-220FP

VISO

-

2500

V

Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum duty cycle D=0.75

2) Pulse width tp limited by Tj,max

3)IdenticallowsideandhighsideswitchwithidenticalRG

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