Electronic Components Datasheet Search |
|
IPB17N25S3-100 Datasheet(PDF) 7 Page - Infineon Technologies AG |
|
IPB17N25S3-100 Datasheet(HTML) 7 Page - Infineon Technologies AG |
7 / 9 page IPB17N25S3-100 IPP17N25S3-100 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 17 A pulsed parameter: V DD V GS Q gate V gs(th) Q g(th) Q gs Q gd Q sw Q g 200 220 240 260 280 300 -60 -20 20 60 100 140 180 T j [°C] 50 V 200 V 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 Q gate [nC] 5.4 A 2.7 A 1.35 A 0 50 100 150 200 250 25 75 125 175 T j [°C] Rev. 1.1 page 7 2013-05-13 |
Similar Part No. - IPB17N25S3-100 |
|
Similar Description - IPB17N25S3-100 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |