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PMN40UPE Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMN40UPE Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page NXP Semiconductors PMN40UPE 20 V, single P-channel Trench MOSFET PMN40UPE All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 August 2012 3 / 14 Symbol Parameter Conditions Min Max Unit Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS source current Tamb = 25 °C [1] - -1.3 A ESD maximum rating VESD electrostatic discharge voltage HBM [3] - 4000 V [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. Tj (°C) - 75 175 125 25 75 - 25 017aaa123 40 80 120 Pder (%) 0 Fig. 1. Normalized total power dissipation as a function of junction temperature Tj (°C) - 75 175 125 25 75 - 25 017aaa124 40 80 120 Ider (%) 0 Fig. 2. Normalized continuous drain current as a function of junction temperature |
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