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BSC0502NSI Datasheet(PDF) 6 Page - Infineon Technologies AG

Part # BSC0502NSI
Description  Metal Oxide Semiconductor Field Effect Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSC0502NSI Datasheet(HTML) 6 Page - Infineon Technologies AG

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6
OptiMOSTM5Power-MOSFET,30V
BSC0502NSI
Rev.2.0,2015-07-13
Final Data Sheet
Table6Gatechargecharacteristics1)
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
3.1
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
2.0
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge
Qgd
-
2.3
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Switching charge
Qsw
-
3.4
-
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
Qg
-
9.0
12
nC
VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.5
-
V
VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total
2)
Qg
-
19
26
nC
VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
8.3
-
nC
VDS=0.1V,VGS=0to4.5V
Output charge
2)
Qoss
-
13.5
18
nC
VDD=15V,VGS=0V
Table7Reversediode
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Diode continuous forward current
IS
-
-
50
A
TC=25°C
Diode pulse current
IS,pulse
-
-
400
A
TC=25°C
Diode forward voltage
VSD
-
0.54
0.65
V
VGS=0V,IF=5A,Tj=25°C
Reverse recovery charge
Qrr
-
15
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
1) See
″Gate charge waveforms″ for parameter definition
2) Defined by design. Not subject to production test.


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