NX3P1108_15 datasheet(4/16 Pages) PHILIPS

Part #	NX3P1108

Description	NX3P1108_15

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NX3P1108

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Product data sheet

Rev. 1 — 9 January 2013

4 of 16

NXP Semiconductors

NX3P1108

Logic controlled high-side power switch

10. Recommended operating conditions

11. Thermal characteristics

[1]

The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to

larger Cu layer areas for example, to the power and ground layer. In multi-layer PCB applications, use the second layer to create a large

heat spreader area right below the device. If this layer is either ground or power, connect it with several vias to the top layer connected

to the device ground or supply. Try not to use any solder-stop varnish under the chip.

[2]

Rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary in

applications using different layer stacks and layouts

12. Static characteristics

Table 6.

Recommended operating conditions

Symbol Parameter

Conditions

Min

Max

Unit

VI

input voltage

0.9

3.6

V

Tamb

ambient temperature

40

+85

C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-a)

thermal resistance from junction to ambient

[1][2] 84

K/W

Table 8.

Static characteristics

VI(VIN) = 0.9 V to 3.6 V, unless otherwise specified; Voltages are referenced to GND (ground = 0 V).

Symbol Parameter

Conditions

Tamb = 25 C

Tamb = 40 C to +85 C Unit

Min

Typ

Max

Min

Max

VIH

HIGH-level

input voltage

EN input

VI(VIN) = 0.9 V to 1.1 V

-

0.8

-

V

VI(VIN) = 1.1 V to 1.3 V

-

1.0

-

V

VI(VIN) = 1.3 V to 1.8 V

-

1.1

-

V

VI(VIN) = 1.8 V to 3.6 V

-

1.1

-

V

VIL

LOW-level

input voltage

EN input

VI(VIN) = 0.9 V to 1.1 V

-

0.2

V

VI(VIN) = 1.1 V to 1.3 V

-

0.3

V

VI(VIN) = 1.3 V to 1.8 V

-

0.4

V

VI(VIN) = 1.8 V to 3.6 V

-

0.45

V

II

input leakage

current

VI(EN) =0V or3.6 V

-

0.1

-

1

A

IGND

ground current VI(EN) = 0 V or 3.6 V; VOUT open;

see Figure 5 and Figure 6

--

-

2-

A

IS(OFF)

OFF-state

leakage

current

VI(VIN) = 3.6 V; VI(EN) = GND;

VI(VOUT) = GND; see Figure 10

and Figure 11

-0.1

-

2.0

A

Rdch

discharge

resistance

VOUT output; VI(VIN) =3.3 V

-

120

-



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