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BUK7631-100E Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK7631-100E Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 13 page NXP Semiconductors BUK7631-100E N-channel TrenchMOS standard level FET BUK7631-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 October 2012 4 / 13 003aah676 10-2 10-1 1 10 102 10-3 10-2 10-1 1 10 tAL(ms) IAL (A) (1) (2) (3) Fig. 3. Avalanche rating; avalanche current as a function of avalanche time 003aah677 10-2 10-1 1 10 102 103 1 10 102 103 VDS(V) ID (A) Limit RDSon= VDS/ ID DC 100 µs 10 ms tp=10 µs 100 ms 1 ms Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 1.56 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint ; mounted on a printed-circuit board - 50 - K/W |
Similar Part No. - BUK7631-100E_15 |
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Similar Description - BUK7631-100E_15 |
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