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BUK766R0-60E Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK766R0-60E Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page NXP Semiconductors BUK766R0-60E N-channel TrenchMOS standard level FET BUK766R0-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 13 July 2012 4 / 12 003aah707 10-1 1 10 102 103 10-1 1 10 102 VDS(V) ID (A) Limit RDSon= VDS/ ID DC 100 µs 10 ms tp=10µs 100 ms 1 ms Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 5 - - 0.82 K/W Rth(j-a) thermal resistance from junction to ambient minimum footprint ; mounted on a printed-circuit board - 50 - K/W 003aah708 single shot 0.2 0.1 0.05 10-3 10-2 10-1 1 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) Zth(j-mb) (K/W) δ = 0.5 0.02 tp T P t tp T δ = Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration |
Similar Part No. - BUK766R0-60E_15 |
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Similar Description - BUK766R0-60E_15 |
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