IDM10G120C5_15 datasheet(6/10 Pages) INFINEON

Part #	IDM10G120C5

Description	Silicon Carbide Schottky Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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6 / 10 page

Final Data Sheet

6

Rev. 2.0, 2015-22-07

5

th Generation thinQ!™ 1200 V SiC Schottky Diode

IDM10G120C5

Figure 1. Power dissipation as a function

of case temperature, Ptot=f(TC),

Rth(j-c),max

Figure 2. Diode forward current as function

of temperature, Tj≤175°C,

Rth(j-c),max, parameter D=duty cycle,

Vth, Rdiff @ Tj=175°C

Figure 3. Typical forward characteristics,

IF=f(VF), tp= 10 µs, parameter: Tj

Figure 4. Typical forward characteristics in surge

current, IF=f(VF), tp= 10 µs,

parameter: Tj

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