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IDM10G120C5 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IDM10G120C5 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page Final Data Sheet 6 Rev. 2.0, 2015-22-07 5 th Generation thinQ!™ 1200 V SiC Schottky Diode IDM10G120C5 Figure 1. Power dissipation as a function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current as function of temperature, Tj≤175°C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175°C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 µs, parameter: Tj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 µs, parameter: Tj |
Similar Part No. - IDM10G120C5_15 |
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Similar Description - IDM10G120C5_15 |
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