NXP Semiconductors

BUK7Y22-100E

N-channel 100 V, 22 mΩ standard level MOSFET in LFPAK56

BUK7Y22-100E

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Product data sheet

8 May 2013

5 / 13

003aai628

1

1

10

(K/W)

(K/W)

P

t

T

δ = T

single shot

single shot

δ = 0.5

δ = 0.5

0.2

0.2

0.1

0.1

0.05

0.05

0.02

0.02

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

100

-

-

V

drain-source

breakdown voltage

90

-

-

V

Fig. 9; Fig. 10

2.4

3

4

V

Fig. 9

-

-

4.5

V

gate-source threshold

voltage

Fig. 9

1

-

-

V

-

0.04

10

µA

drain leakage current

-

-

500

µA

-

2

100

nA

gate leakage current

-

2

100

nA

Fig. 11

-

14.2

22

mΩ

drain-source on-state

resistance

Fig. 11; Fig. 12

-

-

61

mΩ

Dynamic characteristics

total gate charge

-

47

-

nC

gate-source charge

-

9

-

nC

gate-drain charge

-

17

-

nC