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PMC85XP Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMC85XP Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page NXP Semiconductors PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 15 May 2013 3 / 15 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit P-channel Trench MOSFET VDS drain-source voltage - -30 V VGS gate-source voltage Tj = 25 °C -12 12 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.4 A VGS = -4.5 V; Tamb = 25 °C [1] - -2.6 A ID drain current VGS = -4.5 V; Tamb = 100 °C [1] - -1.6 A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -8 A [2] - 485 mW Tamb = 25 °C [1] - 1170 mW Ptot total power dissipation Tsp = 25 °C [2] - 8300 mW P-channel Trench MOSFET; source-drain diode IS source current Tamb = 25 °C [1] - -1.2 A NPN RET VCBO collector-base voltage Tamb = 25 °C; open emitter - 50 V VCEO collector-emitter voltage Tamb = 25 °C; open base - 50 V VEBO emitter-base voltage Tamb = 25 °C; open collector - 10 V positive - 30 V VI input voltage negative - -5 V IO output current - 100 mA ICM peak collector current - 100 mA [2] - 465 mW Tamb = 25 °C [1] - 985 mW Ptot total power dissipation Tsp = 25 °C [2] - 4160 mW Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2 [2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. |
Similar Part No. - PMC85XP_15 |
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Similar Description - PMC85XP_15 |
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