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BUK9Y65-100E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK9Y65-100E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK9Y65-100E N-channel 100 V, 65 mΩ logic level MOSFET in LFPAK56 BUK9Y65-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 9 May 2013 7 / 13 003aaj177 0 0.5 1 1.5 2 2.5 3 3.5 4 0 6 12 18 24 30 36 VGS (V) ID ID (A) (A) Tj = 25°C Tj = 25°C 175°C 175°C Fig. 8. Transfer characteristics; drain current as a function of gate-source voltage; typical values 003aah025 0 0.5 1 1.5 2 2.5 3 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah026 10-6 10-5 10-4 10-3 10-2 10-1 0 1 2 3 VGS (V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aaj180 0 20 40 60 80 100 0 5 10 15 20 ID (A) RDSon (mΩ) 4.5 VGS (V) = 10 2.8 2.6 3 3.5 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - BUK9Y65-100E_15 |
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Similar Description - BUK9Y65-100E_15 |
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