PSMN075-100MSE_15 datasheet(3/13 Pages) PHILIPS

Part #	PSMN075-100MSE

Description	N-channel 100 V 71 m廓 standard level MOSFET in LFPAK33 designed specifically for PoE applications

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NXP Semiconductors

PSMN075-100MSE

N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed

specifically for PoE applications

PSMN075-100MSE

All information provided in this document is subject to legal disclaimers.

Product data sheet

26 March 2013

3 / 13

Symbol

Parameter

Conditions

Min

Max

Unit

VGS

gate-source voltage

-20

20

V

VGS = 10 V; Tj = 25 °C; Fig. 1

-

18

A

ID

drain current

VGS = 10 V; Tmb = 100 °C; Fig. 1

-

13

A

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4

-

74

A

Ptot

total power dissipation

Tmb = 25 °C; Fig. 2

-

65

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Tsld(M)

peak soldering temperature

-

260

°C

Source-drain diode

IS

source current

Tmb = 25 °C

-

54

A

ISM

peak source current

pulsed; tp ≤ 10 µs; Tmb = 25 °C

-

74

A

Avalanche Ruggedness

EDS(AL)S

non-repetitive drain-source

avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 18 A;

Vsup ≤ 100 V; RGS = 50 Ω; unclamped;

Fig. 3

-

25

mJ

003aak714

0

25

50

75

100 125 150 175 200

0

4

8

12

16

20

Tj (°C)

ID

(A)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0

200

150

50

100

03aa16

40

80

120

Pder

(%)

0

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

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PSMN075-100MSE Datasheet(PDF) 3 Page - NXP Semiconductors

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