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PSMN020-100YS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PSMN020-100YS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page NXP Semiconductors PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK PSMN020-100YS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 26 March 2014 9 / 14 003aad841 10 20 30 40 50 60 0 15 30 45 60 ID (A) RDSon (mΩ) 6.5 VGS (V) = 10 5.0 4.5 Fig. 14. Drain-source on-state resistance as a function of drain current; typical values 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. Gate charge waveform definitions 003aad842 0 2 4 6 8 10 0 12 24 36 48 QG (nC) VGS (V) VDS = 50 V 80 V 20 V Fig. 16. Gate-source voltage as a function of gate charge; typical values 003aad839 10 102 103 104 10-1 1 10 102 VDS (V) C (pF) Ciss Crss Coss Fig. 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
Similar Part No. - PSMN020-100YS_15 |
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Similar Description - PSMN020-100YS_15 |
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