PSMN7R0-100PS_15 datasheet(5/14 Pages) PHILIPS

Part #	PSMN7R0-100PS

Description	N-channel 100V 6.8 m廓 standard level MOSFET in TO220.

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NXP Semiconductors

PSMN7R0-100PS

N-channel 100V 6.8 mΩ standard level MOSFET in TO220.

PSMN7R0-100PS

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Product data sheet

17 October 2013

5 / 14

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

vertical in free air

-

60

-

K/W

003aad560

10-4

10-3

10-2

10-1

1

10-6

10-5

10-4

10-3

10-2

10-1

1

10

tp (s)

Zth (j-mb)

(K/W)

single shot

0.02

0.05

0.1

0.2

δ = 0.5

tp

T

P

t

tp

T

δ =

Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ID = 0.25 mA; VGS = 0 V; Tj = -55 °C

90

-

V

V(BR)DSS

drain-source

breakdown voltage

ID = 0.25 mA; VGS = 0 V; Tj = 25 °C

100

-

V

ID = 1 mA; VDS = VGS; Tj = 175 °C;

Fig. 10

1

-

V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 11; Fig. 10

2

3

4

V

VGS(th)

gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 10

-

4.6

V

VDS = 100 V; VGS = 0 V; Tj = 125 °C

-

150

µA

IDSS

drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 25 °C

-

0.08

5

µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C

-

10

100

nA

IGSS

gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C

-

10

100

nA

VGS = 10 V; ID = 15 A; Tj = 100 °C;

Fig. 12

-

12

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 15 A; Tj = 175 °C;

Fig. 12

-

15

19

mΩ

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NXP Semiconductors	PSMN7R0-100PS	252Kb / 16P	N-channel 100V 6.8 m廓 standard level MOSFET in TO220 Rev. 02-7 January 2010
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Manufacturer	Part #	Datasheet	Description
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PSMN7R0-100PS Datasheet(PDF) 5 Page - NXP Semiconductors

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