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PMXB120EPE Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PMXB120EPE
Description  30 V, P-channel Trench MOSFET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMXB120EPE Datasheet(HTML) 6 Page - NXP Semiconductors

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NXP Semiconductors
PMXB120EPE
30 V, P-channel Trench MOSFET
PMXB120EPE
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
24 September 2013
6 / 15
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-1
-1.5
-2.5
V
IDSS
drain leakage current
VDS = -30 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
-
-1
µA
VGS = -10 V; ID = -2.4 A; Tj = 25 °C
-
100
120
VGS = -10 V; ID = -2.4 A; Tj = 150 °C
-
156
187
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2 A; Tj = 25 °C
-
125
170
gfs
forward
transconductance
VDS = -10 V; ID = -2.4 A; Tj = 25 °C
-
5
-
S
RG
gate resistance
f = 1 MHz
-
14.5
-
Ω
Dynamic characteristics
QG(tot)
total gate charge
-
6.2
11
nC
QGS
gate-source charge
-
0.9
-
nC
QGD
gate-drain charge
VDS = -15 V; ID = -2.4 A; VGS = -10 V;
Tj = 25 °C
-
1.1
-
nC
Ciss
input capacitance
-
309
-
pF
Coss
output capacitance
-
41
-
pF
Crss
reverse transfer
capacitance
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
32
-
pF
td(on)
turn-on delay time
-
4
-
ns
tr
rise time
-
11
-
ns
td(off)
turn-off delay time
-
16
-
ns
tf
fall time
VDS = -15 V; ID = -2.4 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
7
-
ns
Source-drain diode
VSD
source-drain voltage
IS = -0.9 A; VGS = 0 V; Tj = 25 °C
-
-0.8
-1.2
V


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