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IDH05G120C5 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IDH05G120C5
Description  Silicon Carbide Schottky Diode
Download  10 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDH05G120C5 Datasheet(HTML) 4 Page - Infineon Technologies AG

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Final Data Sheet
4
Rev. 2.0, 2015-08-28
5
th Generation thinQ!™ 1200 V SiC Schottky Diode
IDH05G120C5
Maximum ratings
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continues forward current for Rth(j-c,max)
TC = 161°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
IF
5.0
9.2
19.1
A
Surge non-repetitive forward current,
sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
IF,SM
59
50
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
IF,max
472
A
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
17.4
12.5
A²s
Diode dv/dt ruggedness
VR=0…960V
dv/dt
80
V/ns
Power dissipation
TC = 25°C
Ptot
109
W
Operating temperature
Tj
-
55…175
°C
Storage temperature
Tstg
-
55…150
°C
Soldering temperature,
wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Tsold
260
°C
Mounting torque
M3 and M4 screws
M
0.7
Nm
Thermal Resistances
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction
– case
Rth(j-c)
-
1.06
1.37
K/W
Thermal resistance,
junction
– ambient
Rth(j-a)
leaded
-
-
62
K/W


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