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BFR106 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFR106 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 8 page September 1995 2 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications. PINNING PIN DESCRIPTION Code: R7p 1 base 2 emitter 3 collector Fig.1 SOT23. age MSB003 Top view 12 3 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V IC DC collector current −− 100 mA Ptot total power dissipation up to Ts =70 °C; note 1 −− 500 mW hFE DC current gain IC = 50 mA; VCE =9 V; Tamb =25 °C25 80 − fT transition frequency IC = 50 mA; VCE = 9 V; f = 500 MHz; Tamb =25 °C − 5 − GHz GUM maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz; Tamb =25 °C − 11.5 − dB Vo output voltage IC = 50 mA; VCE = 9 V; RL =75 Ω; Tamb =25 °C; dim = −60 dB; f(p+q−r) = 793.25 MHz − 350 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3V IC DC collector current − 100 mA Ptot total power dissipation up to Ts =70 °C; note 1 − 500 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C |
Similar Part No. - BFR106_15 |
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Similar Description - BFR106_15 |
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