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BFG540W Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG540W Datasheet(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
6 / 16 page 2000 May 23 6 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540W BFG540W/X; BFG540W/XR f = 900 MHz; VCE =8V. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 50 MLC045 10 20 30 40 gain (dB) I (mA) C MSG GUM G max f = 2 GHz; VCE =8V. Fig.8 Gain as a function of collector current; typical values. handbook, halfpage 0 30 20 10 0 50 MLC046 10 20 30 40 gain (dB) I (mA) C GUM G max IC = 10 mA; VCE =8V. Fig.9 Gain as a function of frequency; typical values. handbook, halfpage 50 0 10 MLC047 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM G max MSG Fig.10 Gain as a function of frequency; typical values. IC = 40 mA; VCE =8V. handbook, halfpage 50 0 10 MLC048 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM G max MSG |
Similar Part No. - BFG540W_15 |
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Similar Description - BFG540W_15 |
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