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BFG520W Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG520W Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 16 page 1998 Oct 02 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistors BFG520W; BFG520W/X FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV) and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. MARKING TYPE NUMBER CODE BFG520W N3 BFG520W/X N4 PINNING PIN DESCRIPTION BFG250W BFG250W/X 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter Fig.1 Simplified outline SOT343N. handbook, halfpage Top view MBK523 2 1 3 4 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage RBE =0 −− 15 V IC collector current (DC) −− 70 mA Ptot total power dissipation Ts ≤ 85 °C −− 500 mW hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.35 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =25 °C − 9 − GHz GUM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C − 17 − dB |S21|2 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C16 17 − dB F noise figure Γ s =Γopt; IC = 5 mA; VCE = 6 V; f = 900 MHz − 1.1 1.6 dB |
Similar Part No. - BFG520W_15 |
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