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BFG520W Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # BFG520W
Description  NPN 9 GHz wideband transistors
Download  16 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFG520W Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
MARKING
TYPE NUMBER
CODE
BFG520W
N3
BFG520W/X
N4
PINNING
PIN
DESCRIPTION
BFG250W
BFG250W/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
Fig.1 Simplified outline SOT343N.
handbook, halfpage
Top view
MBK523
2
1
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCES
collector-emitter voltage RBE =0
−−
15
V
IC
collector current (DC)
−−
70
mA
Ptot
total power dissipation
Ts ≤ 85 °C
−−
500
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
Cre
feedback capacitance
IC = 0; VCB = 6 V; f = 1 MHz
0.35
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =25 °C
9
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C −
17
dB
|S21|2
insertion power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =25 °C16
17
dB
F
noise figure
Γ
s opt; IC = 5 mA; VCE = 6 V; f = 900 MHz
1.1
1.6
dB


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