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CHV2411AQDG Datasheet(PDF) 4 Page - United Monolithic Semiconductors

Part # CHV2411AQDG
Description  Fully Integrated HBT K-band VCO
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Manufacturer  UMS [United Monolithic Semiconductors]
Direct Link  http://www.ums-gaas.com
Logo UMS - United Monolithic Semiconductors

CHV2411AQDG Datasheet(HTML) 4 Page - United Monolithic Semiconductors

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CHV2411aQDG
K-band VCO
Ref. : DSCHV2411aQDG3232 - 20 Aug 13
4/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Device thermal performances
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature cannot be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).


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