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CHV2411AQDG Datasheet(PDF) 4 Page - United Monolithic Semiconductors |
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CHV2411AQDG Datasheet(HTML) 4 Page - United Monolithic Semiconductors |
4 / 12 page CHV2411aQDG K-band VCO Ref. : DSCHV2411aQDG3232 - 20 Aug 13 4/12 Specifications subject to change without notice Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Device thermal performances All the figures given in this section are obtained assuming that the QFN device is cooled down only by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase) as shown below. The system maximum temperature must be adjusted in order to guarantee that Tcase remains below the maximum value specified in the next table. So, the system PCB must be designed to comply with this requirement. A derating must be applied on the dissipated power if the Tcase temperature cannot be maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to guarantee the nominal device life time (MTTF). |
Similar Part No. - CHV2411AQDG_15 |
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Similar Description - CHV2411AQDG_15 |
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