CHU2277

W-band Multiplier/MPA

Ref. DSCHU22771074 -15-Mar.-01

4/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Typical Assembly and Bias Configuration

L_in

-V

+V

µ-strip line

DC lines

>= 120pF

>= 120pF

L_out1

1

2

3

4

5

6

7

8

9

10

11

12

L_out2

µ-strip line

µ-strip line

This drawing shows an example of assembly and bias configuration. All the

transistors are internally self biased. An external capacitor is recommended for

the positive and negative supply voltages.

For the RF pads the equivalent wire bonding inductance (diameter=25µm) have

to be according to the following recommendation.

Port

Equivalent inductance

(nH)

Wire length (mm)

(1)

IN (2)

L_in = 0.32

0.4

OUT1 (5)

L_out1 = 0.32

0.4

OUT2 (8)

L_out2 = 0.32

0.4

(1) This value is the total length including the necessary loop from pad to

pad.

For a micro-strip configuration a hole in the substrate is necessary for chip

assembly.