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BF1208 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1208 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 22 page 9397 750 14254 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 16 March 2005 3 of 22 Philips Semiconductors BF1208 Dual N-channel dual gate MOSFET 3. Ordering information 4. Marking 5. Limiting values [1] Tsp is the temperature at the soldering point of the source lead. Table 3: Ordering information Type number Package Name Description Version BF1208 - plastic surface mounted package; 6 leads SOT666 Table 4: Marking codes Type number Marking code BF1208 2L Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage (DC) - 6 V ID drain current (DC) - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA Ptot total power dissipation Tsp ≤ 109 °C [1] - 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Fig 1. Power derating curve Tsp (˚C) 0 200 150 50 100 001aac193 100 150 50 200 250 Ptot (mW) 0 |
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