PSMN1R1-30EL_15 datasheet(2/13 Pages) PHILIPS

Part #	PSMN1R1-30EL

Description	N-channel 30 V 1.3 m廓 logic level MOSFET in I2PAK

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NXP Semiconductors

PSMN1R1-30EL

N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK

PSMN1R1-30EL

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Product data sheet

2 April 2014

2 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;

Vsup ≤ 30 V; RGS = 50 Ω; unclamped

-

1.9

J

[1] Continuous current is limited by package.

[2] Measured 3 mm from package.

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

D

drain

3

S

source

mb

D

mounting base; connected to

drain

3

2

1

mb

I2PAK (SOT226)

S

D

G

mbb076

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PSMN1R1-30EL

I2PAK

plastic single-ended package (I2PAK); TO-262

SOT226

7. Marking

Table 4.

Marking codes

Type number

Marking code

PSMN1R1-30EL

8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

30

V

VDGR

drain-gate voltage

Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ

-

30

V

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