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PSMN0R9-30YLD Datasheet(PDF) 2 Page - NXP Semiconductors |
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PSMN0R9-30YLD Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page NXP Semiconductors PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology PSMN0R9-30YLD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 11 November 2014 2 / 13 Symbol Parameter Conditions Min Typ Max Unit Tj junction temperature -55 - 150 °C Static characteristics VGS = 4.5 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.79 1.09 mΩ RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 10 - 0.65 0.87 mΩ Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; Fig. 12; Fig. 13 - 13.5 - nC QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 15 V; Fig. 12; Fig. 13 - 51 - nC Source-drain diode S softness factor IS = 25 A; VGS = 0 V; dIS/dt = -100 A/µs; VDS = 15 V; Fig. 16 - 0.9 - [1] Continuous current is limited by package. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 3 2 1 4 LFPAK56; Power- SO8 (SOT1023) S D G mbb076 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PSMN0R9-30YLD LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56); 4 leads SOT1023 |
Similar Part No. - PSMN0R9-30YLD_15 |
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Similar Description - PSMN0R9-30YLD_15 |
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