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BF909 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF909 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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3 / 12 page  NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 7V ID drain current − 40 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation see Fig.3 BF909 up to Tamb =50 °C; note 1 − 200 mW BF909R up to Tamb =40 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.3 Power derating curves. handbook, halfpage 0 50 100 200 250 0 200 MLB935 150 150 100 50 Ptot (mW) T ( C) amb o BF909R BF909 Rev. 02 - 19 November 2007 3 of 12 |
Similar Part No. - BF909_15 |
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Similar Description - BF909_15 |
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