PMZ390UNE_15 datasheet(6/14 Pages) PHILIPS

Part #	PMZ390UNE

Description	30 V, N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMZ390UNE

30 V, N-channel Trench MOSFET

PMZ390UNE

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Product data sheet

12 March 2015

6 / 14

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

30

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

0.45

0.7

0.95

V

IDSS

drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 25 °C

-

1

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

5

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-5

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

1

µA

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-1

µA

VGS = 2.5 V; VDS = 0 V; Tj = 25 °C

-

100

nA

IGSS

gate leakage current

VGS = -2.5 V; VDS = 0 V; Tj = 25 °C

-

-100

nA

VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C

-

390

470

mΩ

VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C

-

660

790

mΩ

VGS = 2.5 V; ID = 0.8 A; Tj = 25 °C

-

460

620

mΩ

VGS = 1.8 V; ID = 0.12 A; Tj = 25 °C

-

530

770

mΩ

RDSon

drain-source on-state

resistance

VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C

-

610

1020

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 1 A; Tj = 25 °C

-

2

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

0.8

1.3

nC

QGS

gate-source charge

-

0.1

-

nC

QGD

gate-drain charge

VDS = 15 V; ID = 0.8 A; VGS = 4.5 V;

Tj = 25 °C

-

0.2

-

nC

Ciss

input capacitance

-

41

-

pF

Coss

output capacitance

-

6

-

pF

Crss

reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

5

-

pF

td(on)

turn-on delay time

-

4

-

ns

tr

rise time

-

8

-

ns

td(off)

turn-off delay time

-

12

-

ns

tf

fall time

VDS = 15 V; ID = 0.8 A; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

3

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 0.7 A; VGS = 0 V; Tj = 25 °C

-

0.86

1.2

V

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