CHA4105-99F

RoHS COMPLIANT

Ref. : DSCH41051035 - 07 Feb11

1/12

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - BP46 - 91401 Orsay Cedex France

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

2-4GHz Driver

GaAs Monolithic Microwave IC

Description

IN

OUT

V+

V-

The CHA4105-99F is a monolithic two-stage

driver amplifier delivering 24dBm output

power @ 1dB gain compression in the

2-4GHz frequency range.

It

is

designed

for

a

wide

range

of

applications, from military to commercial

communication systems.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through

the

substrate,

air

bridges

and

electron beam gate lithography.

It is available in chip form.

Main Features

-40°C

+25°C

+85°C

■ Broadband performances: 2-4GHz

■ 24dBm @ 1dB gain compression

■ 23dB Gain

■ DC bias: V+ = 5V ; V- = -5V

■ DC power consumption: 180mA

■ Chip size: 2.07 x 1.6 x 0.1 mm

Main Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

2

4

GHz

Gain

Linear Gain

23

dB

P_1dB

Output Power @1dB comp.

24

dBm

ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!